Hardware » Helios

V_GS should be -10 and must not exceed -20V;

U2=(U/(R1+R2))*R2

R1=330
R2=470
[R1|R2]=193.875
Result=28.2; 0.714282%
48V: Reference=-19.8
36V: Reference=-14.85
15V: Reference=-6.1875

U2=(36/(3300+4700))*4700

Bei -4,5 V_GS ist R_DS 0,110 Ohm; V_DS=-0,44V; 1,76W; 2W zulaessig bei T_A=70°C

*[20251209 mase]:*
Measure whats going on, the MOSFET broke.
V_GS 12,8V looks good. Another one broke.

*[20251210 mase]:*
"Application note":https://www.onsemi.com/pub/Collateral/AND9093-D.PDF
"PJW4P06A-R2":https://www.panjit.com.tw/upload/datasheet/PJW4P06A.pdf
I_DM=-16; 2W

Add capacitors from gates to sources.
Adding one at the N-MOSFET may make it unpredictable.

Make R2=27k
VGS=-9,729 @ 36V

Make R2=18K
* 4,285714286V @ 12V
* 12,85714286V @ 36V
* 17,14285714V @ 48V

0,15 Ohm R_DS very bad
4A × 0,15 Ohm = 0,6V
0,6V × 4A = 2,4W

Elkos:
"CD1H476M6L07KVR":https://www.tme.eu/Document/28a7d7325ef9ccb79ff14624469fe009/CD.pdf
0.61 Ohm; ca. 60A; 300A total

Neue MOSFETS:
"SQJ465EP-T1-GE3":https://www.tme.eu/Document/6c6b75a0b7fbfc131b382ba068da91c0/SQJ465EP.pdf
I_DM=-25A; 45W

Besser DI020P06PT-AQ?
I_DM=-70A